Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 31, Issue 42, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202105252
Keywords
doping; metal-organic chemical vapor deposition; tungsten diselenide; 2D materials; vanadium doping
Categories
Funding
- Intel through the Semiconductor Research Corporation (SRC) [2746]
- Penn State 2D Crystal Consortium (2DCC)-Materials Innovation Platform (2DCC-MIP) under NSF [DMR- 1539916]
- NSF CAREER Award [1453924, DMR-1654107]
- Swiss National Science Foundation under SNSF project [159690]
- NSF [DMR-1539916, DMR-1748464, OAC-1740251]
- Army Research Office (ARO) [W911NF1920338]
- Materials Characterization Lab at Penn State
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1453924] Funding Source: National Science Foundation
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This study reports the successful scalable growth and vanadium doping of 2D WSe2 at compatible temperatures, confirming p-type doping via substitutional replacement of tungsten by vanadium atoms. The p-type nature of the V dopants is further verified by constructed field-effect transistors.
Scalable substitutional doping of 2D transition metal dichalcogenides is a prerequisite to developing next-generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here, scalable growth and vanadium (V) doping of 2D WSe2 at front-end-of-line and back-end-of-line compatible temperatures of 800 and 400 degrees C, respectively, is reported. A combination of experimental and theoretical studies confirm that vanadium atoms substitutionally replace tungsten in WSe2, which results in p-type doping via the introduction of discrete defect levels that lie close to the valence band maxima. The p-type nature of the V dopants is further verified by constructed field-effect transistors, where hole conduction becomes dominant with increasing vanadium concentration. Hence, this study presents a method to precisely control the density of intentionally introduced impurities, which is indispensable in the production of electronic-grade wafer-scale extrinsic 2D semiconductors.
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