Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 31, Issue 48, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202105506
Keywords
active-matrix organic light-emitting diodes; AMOLED; dielectrics; display technology; light-emitting transistors; luminescent devices; vertical transistors
Categories
Funding
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China [2021ZR113]
- CAS President's International Fellowship Initiative (PIFI)
- National Foreign Expert Project 2020 research grant [QN20200121001]
- China Postdoctoral Science Foundation [2020M671953]
Ask authors/readers for more resources
Organic light-emitting transistors (OLETs) combine the switching functionality of field-effect transistors (FETs) with the light-emitting characteristics of organic light-emitting diodes (OLEDs) to simplify device architecture for flat panel and flexible display technology. Key tactics include improving electrode design, utilizing vertical architecture for short channel lengths and high aperture ratios, and incorporating high–k dielectric materials to enhance device performance.
Organic light-emitting transistors (OLET) evolved from the fusion of the switching functionality of field-effect transistors (FET) with the light-emitting characteristics of organic light-emitting diode (OLED) that can simplify the active-matrix pixel device architecture and hence offer a promising pathway for future flat panel and flexible display technology. This review systematically analyzes the key device/molecular engineering tactics that assist in improving the electrode edge narrow emission to wide-area emission for display applications via three different topics, that is, narrow to wide-area emission, vertical architecture, and impact of high-kappa dielectric on the device performance. Source-drain electrode engineering such as symmetric/asymmetric, planar/non-planar arrangement, semitransparent nature, multilayer approach comprising charge transport, and work function modification layers enable widening the emission zone. Vertical OLET architecture offers short channel lengths with a high aperture ratio, pixel type area emission, and stable light-emitting area. Transistors utilizing high-kappa dielectric materials have assisted in lowering the operating voltage, enhancing luminance and air stability. The promising development in achieving wide-area emission provides a solid basis for constructing OLET research toward display applications; however, it relies on developing highly luminescent and fast charge transporting materials, suitable semitransparent source/drain electrodes, high-kappa -dielectrics, and device architectural engineering.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available