Related references
Note: Only part of the references are listed.Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing
Sifan Li et al.
NPJ 2D MATERIALS AND APPLICATIONS (2021)
Promises and prospects of two-dimensional transistors
Yuan Liu et al.
NATURE (2021)
Efficient strain modulation of 2D materials via polymer encapsulation
Zhiwei Li et al.
NATURE COMMUNICATIONS (2020)
A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance
Abhinav Gaur et al.
2D MATERIALS (2020)
2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope
Cedric Klinkert et al.
ACS NANO (2020)
WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake
Nicolo Oliva et al.
NPJ 2D MATERIALS AND APPLICATIONS (2020)
Ultrasensitive and robust two-dimensional indium selenide flexible electronics and sensors for human motion detection
Li Chen et al.
NANO ENERGY (2020)
Crested two-dimensional transistors
Tao Liu et al.
NATURE NANOTECHNOLOGY (2019)
Analysis of admittance measurements of MOS capacitors on CVD grown bilayer MoS2
Abhinav Gaur et al.
2D MATERIALS (2019)
Full Energy Spectra of Interface State Densities for n- and p-type MoS2 Field-Effect Transistors
Nan Fang et al.
ADVANCED FUNCTIONAL MATERIALS (2019)
Graphene and two-dimensional materials for silicon technology
Deji Akinwande et al.
NATURE (2019)
Strain Engineering of 2D Materials: Issues and Opportunities at the Interface
Zhaohe Dai et al.
ADVANCED MATERIALS (2019)
Critical assessment of charge mobility extraction in FETs
Hyun Ho Choi et al.
NATURE MATERIALS (2018)
Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS2 Field-Effect Transistors by Atomic Nitrogen Treatment
Baoshan Tang et al.
ACS NANO (2018)
High Mobility Anisotropic Black Phosphorus Nanoribbon Field-Effect Transistor
Xuewei Feng et al.
ADVANCED FUNCTIONAL MATERIALS (2018)
Significance of the gate voltage-dependent mobility in the electrical characterization of organic field effect transistors
Jong Beom Kim et al.
APPLIED PHYSICS LETTERS (2018)
Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance-voltage analysis
Peng Zhao et al.
2D MATERIALS (2018)
Gigahertz Integrated Circuits Based on Complementary Black Phosphorus Transistors
Li Chen et al.
ADVANCED ELECTRONIC MATERIALS (2018)
Comparison of Electrical and Photoelectrical Properties of ReS2 Field-Effect Transistors on Different Dielectric Substrates
Ghazanfar Nazir et al.
ACS APPLIED MATERIALS & INTERFACES (2018)
Strain engineering in two-dimensional nanomaterials beyond graphene
Shikai Deng et al.
NANO TODAY (2018)
Elastic properties of bulk and low-dimensional materials using van der Waals density functional
Kamal Choudhary et al.
PHYSICAL REVIEW B (2018)
A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters
Adelmo Ortiz-Conde et al.
MICROELECTRONICS RELIABILITY (2017)
Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method
Cedric Rolin et al.
NATURE COMMUNICATIONS (2017)
Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric
Pengkun Xia et al.
SCIENTIFIC REPORTS (2017)
Low Variability in Synthetic Monolayer MoS2 Devices
Kirby K. H. Smithe et al.
ACS NANO (2017)
Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping
Wee Chong Tan et al.
ADVANCED MATERIALS (2017)
Mobility overestimation due to gated contacts in organic field-effect transistors
Emily G. Bittle et al.
NATURE COMMUNICATIONS (2016)
Two- and four-probe field-effect and Hall mobilities in transition metal dichalcogenide field-effect transistors
Ghazanfar Nazir et al.
RSC ADVANCES (2016)
2D Semiconductor FETs-Projections and Design for Sub-10 nm VLSI
Wei Cao et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
Kibum Kang et al.
NATURE (2015)
Field-Effect Transistors Built from All Two-Dimensional Material Components
Tania Roy et al.
ACS NANO (2014)
On the mobility and contact resistance evaluation for transistors based on MoS2 or two-dimensional semiconducting atomic crystals
Hsiao-Yu Chang et al.
APPLIED PHYSICS LETTERS (2014)
Precise parameter extraction technique for organic thin-film transistors operating in the linear regime
Ognian Marinov et al.
JOURNAL OF APPLIED PHYSICS (2014)
Two-dimensional semiconductors with possible high room temperature mobility
Wenxu Zhang et al.
NANO RESEARCH (2014)
Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
Wenjuan Zhu et al.
NATURE COMMUNICATIONS (2014)
Measurement of mobility in dual-gated MoS2 transistors
Michael S. Fuhrer et al.
NATURE NANOTECHNOLOGY (2013)
Revisiting MOSFET threshold voltage extraction methods
Adelmo Ortiz-Conde et al.
MICROELECTRONICS RELIABILITY (2013)
Hopping transport through defect-induced localized states in molybdenum disulphide
Hao Qiu et al.
NATURE COMMUNICATIONS (2013)
Parameter Extraction of Short-Channel a-Si:H TFT Including Self-Heating Effect and Drain Current Nonsaturation
Zhao Tang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2010)
Compact modeling of charge carrier mobility in organic thin-film transistors
O. Marinov et al.
JOURNAL OF APPLIED PHYSICS (2009)
Analysis of the parasitic S/D resistance in multiple-gate FETs
A Dixit et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2005)
Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric
F Lime et al.
SOLID-STATE ELECTRONICS (2003)
New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions
A Cerdeira et al.
SOLID-STATE ELECTRONICS (2001)