Projected Mushroom Type Phase-Change Memory

Phase-change memory devices have found applications in in-memory computing where the physical attributes of these devices are exploited to compute in places without the need to shuttle data between memory and processing units. However, nonidealities such as temporal variations in the electrical resistance have a detrimental impact on the achievable computational precision. To address this, a promising approach is projecting the phase configuration of phase change material onto some stable element within the device. Here, the projection mechanism in a prominent phase-change memory device architecture, namely mushroom-type phase-change memory, is investigated. Using nanoscale projected Ge2Sb2Te5 devices, the key attributes of state-dependent resistance, drift coefficients, and phase configurations are studied, and using them how these devices fundamentally work is understood.

Automated summary

Phase-change memory devices are utilized in in-memory computing to compute without needing to transfer data between memory and processing units. The projection of phase configurations onto stable elements within the device is a promising approach to address nonidealities. By investigating the projection mechanism in prominent phase-change memory device architectures, such as the mushroom-type phase-change memory, the key attributes and operational principles of nanoscale projected Ge2Sb2Te5 devices are understood.