4.8 Article

Controllable Photonic Structures on Silicon-on-Insulator Devices Fabricated Using Femtosecond Laser Lithography

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 13, Issue 36, Pages 43622-43631

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c11292

Keywords

femtosecond laser; silicon-on-insulator; controllable photonic structures; subwavelength grating; silicon photonic wire

Funding

  1. National Natural Science Foundation of China [52075041]
  2. Beijing Municipal Natural Science Foundation [JQ20015]

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In this paper, a mask-free, one-step femtosecond laser lithography method is proposed for efficient fabrication of high-quality controllable planar photonic structures on SOI devices, achieving large-area fabrication with powerful optical properties. Active control of the SOI surface structure morphology and successful generation of homogeneous silicon photonic wire are realized through precision adjustment of the pulse injection volumes, promoting the development of integrated optics.
The design of micro/nanostructures on silicon-on-insulator (SOI) devices has attracted widespread attention in the science and applications of integrated optics, which, however, are usually restricted by the current manufacturing technologies. Hence, in this paper, we propose a mask-free, one-step femtosecond laser lithography method for efficient fabrication of high-quality controllable planar photonic structures on SOI devices. Subwavelength gratings with high uniformity are flexibly prepared on a SOI wafer, and they can be efficiently extended for large-area fabrication with long-range uniformity. Different from the melt flow mechanism to bulk silicon, the buried SiO2 layer of the SOI material provides substantial control over the phase change process, thereby achieving local rapid vaporization to form a high-quality structure. The optical properties of the prepared structures are measured experimentally and determined to possess powerful diffraction and light-coupling characteristics. Strikingly, active control of the SOI surface structure morphology, from the grating to the periodic silicon wire structure, can be realized through precision adjustment of the pulse injection volumes. A homogeneous silicon photonic wire is successfully generated on the SOI device, providing an alternative to the preparation of waveguides. This effective femtosecond laser lithography method for fabricating controllable photonic structures on SOI devices is expected to further promote the development of integrated optics.

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