Surface Plasmon Resonance from Gallium-Doped Zinc Oxide Nanoparticles and Their Electromagnetic Enhancement Contribution to Surface-Enhanced Raman Scattering

In recent years, semiconductor-based surface-enhanced Raman scattering (SERS) substrates have received considerable attention and led to a forefront in the SERS field. However, the lack of electromagnetic (EM) enhancement contributions highly precludes the development of semiconductive-substrate-based SERS. In this study, Ga-doped ZnO nanoparticles (NPs) were fabricated and employed as novel SERS substrates based on the EM enhancement contribution of surface plasmon resonance (SPR). The obtained Ga-doped ZnO NPs exhibited obvious SPR absorptions in the visible and near- and mid-infrared regions. SPR absorption can be readily tuned by changing the doping ratios of Ga3+ ions. The SERS spectra of Ga-doped ZnO/4-mercaptopyridine (MPy) were investigated at different excitation wavelengths of 488, 532, 633, and 785 nm. The spectral enhancement of Ga-doped ZnO substrates depended on the doping ratios, excitation wavelengths, and nearby SPR absorption. Ga-doped ZnO NPs with the highest free charge carrier density and the doping ratio of 5% showed the strongest SERS spectra. For the fixed doping ratio of 5%, the better is the match between excitation wavelengths and SPR absorption, the higher is the SERS spectral enhancement. This study showed the feasibility of EM contributions to SERS by using semiconductive substrates and can contribute to the development of the semiconductor-based EM mechanism.

Automated summary

This study investigated the use of Ga-doped ZnO nanoparticles as novel SERS substrates based on the electromagnetic enhancement contribution of surface plasmon resonance (SPR). It was found that Ga-doped ZnO NPs with the highest free charge carrier density and a doping ratio of 5% exhibited the strongest SERS spectra. The study showed the feasibility of electromagnetic contributions to SERS using semiconductive substrates and could contribute to the development of the semiconductor-based EM mechanism.