Low Deposition Temperature Amorphous ALD-Ga2O3 Thin Films and Decoration with MoS2 Multilayers toward Flexible Solar-Blind Photodetectors

Flexible sensors and photodetectors are among the robust and powerful strategies for advanced and smart devices. Meanwhile, wide band-gap metal oxides are competitive candidates for fabricating flexible solar-blind photodetectors (SBPDs) but still challenging in both fundamental and practical fields. Here, we demonstrate the amorphous ALD-Ga2O3 (am-ALD-Ga2O3) thin films realized at a moderate temperature toward flexible SBPDs. The bandgap (E-g) of 4.88-5.04 eV depends on and changes with the thickness of am-ALD-Ga2O3 thin films during atomic layer deposition (ALD) processes. The SBPDs are fabricated with the as-grown am-ALD-Ga2O3 thin films on desired substrates and exhibit an I-light/I-dark ratio of up to similar to 4.5 x 10(4) and dark current down to similar to 10(-13) A. Subsequently, decorating the ALD-Ga2O3 channels with MoS2 multilayers helps improve the photocurrent of SBPDs that worked in the deep ultraviolet region. We expect that our work will offer more opportunities to understand and exploit am-ALD-Ga2O3 thin films toward advanced flexible SBPDs and functional sensors.

Automated summary

Flexible sensors and photodetectors are important strategies for advanced devices, and the use of amorphous ALD-Ga2O3 thin films has shown promise in fabricating flexible solar-blind photodetectors (SBPDs). Decorating the ALD-Ga2O3 channels with MoS2 multilayers has been found to improve the photocurrent of SBPDs working in the deep ultraviolet region.