Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 13, Issue 33, Pages 40098-40105Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c10716
Keywords
ultrastable metallic glass; physical vapor deposition; enhanced surface mobility; transmission electron microscopy; X-ray diffraction; nanoindentation; nanoscale compositional fluctuation
Funding
- Strategic Priority Research Program of the Chinese Academy of Sciences [XDB30000000]
- National Key Research and Development Plan [2018YFA0703603]
- National Natural Science Foundation of China [51801230, 61888102, 11790291]
- Natural Science Foundation of Guangdong Province [2019B030302010]
- Start-up research grant of Fudan University [IDH2021071]
- Fusion Research Funds from WPI-AIMR, Tohoku University
- ESRF
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By decreasing the rate of physical vapor deposition, ZrCuAl metallic glasses with improved stability and mechanical performances can be formed. The microscopic structural evolution suggests the presence of two dynamical processes during ultrastable metallic glass formation.
By decreasing the rate of physical vapor deposition, ZrCuAl metallic glasses with improved stability and mechanical performances can be formed, while the microscopic structural mechanisms remain unclear. Here, with scanning transmission electron microscopy and high-energy synchrotron X-ray diffraction, we found that the metallic glass deposited at a higher rate exhibits a heterogeneous structure with compositional fluctuations at a distance of a few nanometers, which gradually disappear on decreasing the deposition rate; eventually, a homogeneous structure is developed approaching ultrastability. This microscopic structural evolution suggests the existence of the following two dynamical processes during ultrastable metallic glass formation: a faster diffusion process driven by the kinetic energy of the depositing atoms, which results in nanoscale compositional fluctuations, and a slower collective relaxation process that eliminates the compositional and structural heterogeneity, equilibrates the deposited atoms, and strengthens the local atomic connectivity.
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