4.8 Article

Wafer-Scale and Full-Coverage Two-Dimensional Molecular Monolayers Strained by Solvent Surface Tension Balance

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 13, Issue 22, Pages 26218-26226

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c04198

Keywords

two-dimensional organic materials; molecular monolayer; Langmuir-Blodgett technique; organic field-effect transistors; surface tension balance

Funding

  1. National Natural Science Foundation [21875100]
  2. NSF of Jiangsu Province [BK20180338]
  3. Fundamental Research Funds for the Central Universities in China [0205/14380222, 0205/14380159]
  4. EC through the ERC project SUPRA2DMAT [GA-833707]
  5. Labex project CSC within the Investissement d'Avenir program [ANR-10-LABX-0026 CSC, ANR-10-IDEX-0002-02]
  6. International Center for Frontier Research in Chemistry (icFRC)
  7. Institut Universitaire de France (IUF)

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Inspired by the properties of two-dimensional materials, a new method for generating molecular monolayers at the water surface has been developed. These monolayers can be transferred onto any substrate and have shown dramatic improvements in the performance of organic field-effect transistors.
Inspired by the outstanding properties discovered in two-dimensional materials, the bottom-up generation of molecular monolayers is becoming again extremely popular as a route to develop novel functional materials and devices with tailored characteristics and minimal materials consumption. However, achieving a full-coverage over a large-area still represents a grand challenge. Here we report a molecular self-assembly protocol at the water surface in which the monolayers are strained by a novel solvent surface tension balance (SSTB) instead of a physical film balance as in the conventional Langmuir-Blodgett (LB) method. The obtained molecular monolayers can be transferred onto any arbitrary substrate including rigid inorganic oxides and metals, as well as flexible polymeric dielectrics. As a proof-of-concept, their application as ideal modification layers of a dielectric support for high-performance organic field-effect transistors (OFETs) has been demonstrated. The field-effect mobilities of both p- and n-type semiconductors displayed dramatic improvements of 1-3 orders of magnitude on SSTB-derived molecular monolayer, reaching values as high as 6.16 cm(2) V-1 s(-1) and 0.68 cm(2) V-1 s(-1 )for pentacene and PTCDI-C8, respectively. This methodology for the fabrication of wafer-scale and defect-free molecular monolayers holds potential toward the emergence of a new generation of high-performance electronics based on two-dimensional materials.

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