Solution-Processed Black-Si/Cu2ZnSnS4 Nanocrystal Heterojunctions for Self-Powered Broadband Photodetectors and Photovoltaic Devices

We report, for the first time, the fabrication of n-black Si (B-Si)/p-Cu2ZnSnS4 nanocrystal (CZTS NC) heterojunctions to demonstrate their photodetection and photovoltaic characteristics. Inks with crystalline CZTS NCs can be directly spin coated on an ultralow reflective (<1.5% in the visible range) metal-assisted chemical-etched black Si to fabricate solution-processed B-Si/CZTS heterojunctions, with the process compatible for large area applications. Fabricated devices operate as self-powered visible to near infrared (vis-NIR) wideband photodetectors, with a high I-ph/I-dark ratio of similar to 10(5), a very fast switching speed (similar to mu s), and remarkably high figure-of-merits at zero bias. Furthermore, an optimal thickness of NC layers exhibits superior photovoltaic characteristics with an efficiency >5.0%, even without any surface passivation or encapsulation of the device. The combined studies show impactful potential of the B-Si/CZTS NC heterojunction for future high-speed light-sensing and energy-harvesting devices using solution-processed techniques compatible to large area applications.

Automated summary

A novel n-black Si (B-Si)/p-Cu2ZnSnS4 nanocrystal (CZTS NC) heterojunction has been fabricated for the first time, showing promising photodetection and photovoltaic characteristics. The solution-processed devices demonstrate high performance and compatibility for large area applications in the field of photodetection and energy harvesting.