4.7 Article

Giant electrocaloric effect in BiFeO3 and La codoped PbZr0.7Ti0.3O3 epitaxial thin films in a broad temperature range

Journal

JOURNAL OF MATERIOMICS
Volume 8, Issue 1, Pages 156-165

Publisher

ELSEVIER
DOI: 10.1016/j.jmat.2021.04.007

Keywords

Sol-gel; Epitaxial thin film; Electrocaloric effect; Self-induce-poled

Funding

  1. National Natural Science Foundation of China [51402196, 51973170]
  2. Innovation Project of Guangxi Graduate Education [YCSW2020047]
  3. Guangxi Natural Science Foundation [2017GXNSFFA198015]
  4. open Foundation of Guangxi Key Laboratory of Optical and Electronic Materials and Devices [20KF-6]
  5. Natural Science Foundation of Shaanxi Province [2019JCW-17, 2020JCW-15]
  6. Development and Planning Guide Foundation of Xidian University [21103200005]

Ask authors/readers for more resources

In this study, BFO-La codoped PZT epitaxial thin films were prepared by a sol-gel method on different substrates, and large positive EC effects were achieved over a wide temperature range. The thin film deposited on the (111) oriented substrate exhibited a stronger EC effect near room temperature, while the thin films deposited on the (100) and (110) oriented substrates exhibited stronger EC effects around the peak of the dielectric permittivity.
Ferroelectric thin/thick films with large electrocaloric (EC) effect are critical for solid state cooling technologies. Here, large positive EC effects with two EC peaks in a broad temperature range (similar to 100 K) were obtained in 0.95Pb(0.92)La(0.08)(Zr0.70Ti0.30)(0.98)O-3-0.05BiFeO(3) (BFO-La-codoped PZT) epitaxial thin films deposited on the (100), (110) and (111) oriented SrTiO3 (STO) substrates by a sol-gel method. The thin film deposited on the (111) oriented STO substrate exhibited a stronger EC effect (similar to 20.6 K at 1956 kV/cm) near room temperature. However, the thin films deposited on the (100) and (110) oriented STO substrates exhibited a stronger EC effect (similar to 18.8 K at 1852 kV/cm and similar to 20.8 K at 1230 kV/cm, respectively) around the peak of the dielectric permittivity (T-m, similar to 375 K). Particularly, as the direction of the applied electric field was switched (E < 0), the Delta T of the (100)-oriented thin films around T-m was enhanced significantly from 18.8 K to 38.1 K. The self-induced-poling during the preparing process maybe plays a key role on the magic phenomenon. It can be concluded that the BFO-La-codoped PZT epitaxial thin films are promising candidates for application in the next solid-state cooling devices. (C) 2021 The Chinese Ceramic Society. Production and hosting by Elsevier B.V.

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