Journal
SOLAR RRL
Volume 5, Issue 7, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/solr.202100181
Keywords
atomic layer deposited Al2O3; Cu2ZnSn(S,Se)(4); defect control; kesterites; solar cells
Funding
- National Key R&D Program of China [2019YFB1503500, 2018YEE0203400]
- Natural Science Foundation of China [U1902218, 11774187]
- 111 project [B16027]
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By using atomic layer deposition of aluminum oxide on the precursor film, defects in high-efficiency Cu2ZnSn(S,Se)(4) solar cells can be effectively controlled, leading to increased efficiency and reduced open-circuit voltage deficit.
Cu2ZnSn(S,Se)(4) are emerging as promising photovoltaic materials due to their outstanding photoelectrical performances, benign grain boundaries, and Earth-abundant constituent elements. However, there are largely distributed cation-disordering defects and defect clusters, which lead to an increase in recombination and a large open-circuit voltage deficit and thus deteriorate device performance. Herein, defect control for a high-efficiency Cu2ZnSn(S,Se)(4) solar cell by atomic layer deposition of aluminum oxide (ALD-Al2O3) on the precursor film is reporter. Cu-Zn defects and Sn-related deep defects are largely suppressed because of the decrease in Sn2+ and the increase in Sn4+ in the film by ALD-Al2O3 on the precursor are found, and the crystallinity of absorber layer is improved from a double-layer structure to a completely single-layer structure. Furthermore, the carrier lifetime and recombination in the bulk and interface are significantly improved for devices with ultrathin Al2O3. Using this approach, the conversion efficiency increases from 8.8% to 11.0% and the open-circuit voltage deficit decreases from 0.621 to 0.577 V. Herein, a deep understanding of the relationship between Al2O3 incorporation and high-efficiency Cu2ZnSn(S,Se)(4) devices and a new direction for controlling defects to further improve the performance of kesterite solar cells are provided.
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