4.7 Article

Copper-graphene heterostructure for back-end-of-line compatible high-performance interconnects

Journal

NPJ 2D MATERIALS AND APPLICATIONS
Volume 5, Issue 1, Pages -

Publisher

NATURE RESEARCH
DOI: 10.1038/s41699-021-00216-1

Keywords

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Funding

  1. National Research Foundation (NRF) of Korea - Ministry of Science ICT [2020R1F1A1069342]
  2. Nano-Material Technology Development Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [2016M3A7B4909942, 2016M3A7B4900135]
  3. Industrial Strategic Technology Development Program - Ministry of Trade, Industry & Energy (MOTIE, Korea) [10052853]
  4. GIST Research Institute (GRI) - GIST
  5. Korea Evaluation Institute of Industrial Technology (KEIT) [10052853] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  6. National Research Foundation of Korea [2020R1F1A1069342] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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The study demonstrates the fabrication of a Cu-graphene heterostructure interconnect by synthesizing graphene directly on a Cu interconnect, resulting in enhanced electrical properties and reliability compared to pure Cu interconnects. The doping of graphene to increase carrier density significantly improves the reliability of the graphene-capped interconnect, showing compatibility with practical applications such as next-generation interconnect materials in CMOS back-end-of-line (BEOL).
Here, we demonstrate the fabrication of a Cu-graphene heterostructure interconnect by the direct synthesis of graphene on a Cu interconnect with an enhanced performance. Multilayer graphene films were synthesized on Cu interconnect patterns using a liquid benzene or pyridine source at 400 degrees C by atmospheric pressure chemical vapor deposition (APCVD). The graphene-capped Cu interconnects showed lower resistivity, higher breakdown current density, and improved reliability compared with those of pure Cu interconnects. In addition, an increase in the carrier density of graphene by doping drastically enhanced the reliability of the graphene-capped interconnect with a mean time to failure of >10(6) s at 100 degrees C under a continuous DC stress of 3 MA cm(-2). Furthermore, the graphene-capped Cu heterostructure exhibited enhanced electrical properties and reliability even if it was a damascene-patterned structure, which indicates compatibility with practical applications such as next-generation interconnect materials in CMOS back-end-of-line (BEOL).

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