Journal
FRONTIERS IN PHYSICS
Volume 9, Issue -, Pages -Publisher
FRONTIERS MEDIA SA
DOI: 10.3389/fphy.2021.659782
Keywords
UV detection; perovskite; single crystal; epitaxial growth; photo-diodes
Categories
Funding
- State Key Laboratory of Nuclear Power Safety Monitoring Technology and Equipment [K-A2020.415]
- National Key Research and Development Program of China [2018YFE0125500, 2016YFB0401600]
- Program 111_2.0 in China [BP0719013]
- National Natural Science Foundation Project of China [61775034, 51879042, 61674029, 12005038]
- Research Fund for International Young Scientists [62050410350]
- International Cooperative Research Project of Jiangsu Province [BZ2018056]
- Leading Technology of Jiangsu Basic Research Plan [BK20192003]
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In this study, n(-)-n(+) photo-diodes were fabricated by growing Bi-doped MAPbCl3 epitaxial layer on MAPbCl3 single crystal substrate. The epitaxial layer effectively improved the interface between n(-)-type and n(+)-type layers, resulting in low dark current. This work provides valuable information for UV detection based on perovskites.
Organic-inorganic hybrid methylammonium lead halide perovskite MAPbX3 (where MA = CH3NH3, and X = Cl, Br, I) single crystals are potential semiconductors for photo-detection due to their excellent optoelectronic performance. In particular, MAPbCl(3) single crystal is a wide-band-gap (2.9 eV) semiconductor which is suitable for ultraviolet (UV) detection. In this work, n(-)-n(+) photo-diodes are fabricated through solution-processed epitaxial growth, growing Bi-doped MAPbCl(3) epitaxial layer on MAPbCl(3) single crystal substrate. The epitaxial layer effectively improves the interface between n(-)-type and n(+)-type layers and leads to low dark current. This work provides useful information for UV detection based on perovskites.
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