Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

We report a practical chemical vapor deposition (CVD) route to produce bilayer graphene on a polycrystalline Ni film from liquid benzene (C6H6) source at a temperature as low as 400 degrees C in a vertical cold-wall reaction chamber. The low activation energy of C6H6 and the low solubility of carbon in Ni at such a low temperature play a key role in enabling the growth of large-area bilayer graphene in a controlled manner by a Ni surface-mediated reaction. All experiments performed using this method are reproducible with growth capabilities up to an 8 in. wafer-scale substrate. Raman spectra analysis, high-resolution transmission electron microscopy, and selective area electron diffraction studies confirm the growth of Bernal-stacked bilayer graphene with good uniformity over large areas. Electrical characterization studies indicate that the bilayer graphene behaves much like a semiconductor with predominant p-type doping. These findings provide important insights into the wafer-scale fabrication of low-temperature CVD bilayer graphene for next-generation nanoelectronics.

Automated summary

A practical CVD route was developed to produce bilayer graphene on a polycrystalline Ni film at a low temperature of 400 degrees C, with experiments being reproducible and capable of growing on 8 in. wafer-scale substrates. The bilayer graphene exhibited good uniformity over large areas and behaved like a semiconductor with predominant p-type doping, providing insights for the wafer-scale fabrication of low-temperature CVD bilayer graphene for next-generation nanoelectronics.