Performance simulation of single and dual junction GaInP/GaAs tandem solar cells using AMPS-1D

The solar cell is a semiconductor device that converts sunlight into electricity. In this study, we used Analysis Microelectronic and Photonic Structures (AMPS-1D) simulator to show the performance analysis of Gallium Arsenide (GaAs) based solar cell model. A balance between semiconductor compositions, layer thickness and temperature dependence on the efficiency have been investigated as the layer thickness of the top Gallium Indium Phosphide (GaInP) in double junction solar cells decreases, the efficiency increases. Meanwhile, increasing the n-doped GaAs layer thickness will lead to slight increases in cell efficiency. However, the limitation would be the practical cost of utilising high layer thickness in exchange for a slight increase in high efficiency. The range of thickness from 500 nm to 3500 nm, which gives a variation in the efficiency of approximately 1.3%. However, the simulation results have shown, the temperature increase will lower the efficiency of the solar cell. In double-junction cells, the thickness variation of p-GaInP and n-GaInP significantly change the efficiency of the solar cell. The optimisation achieved here indicates some model structures for practical usage to achieve high-efficiency GaAs based on solar cells.

Automated summary

The study shows that the efficiency of GaAs based solar cells can be improved by adjusting the thickness of GaInP and n-doped GaAs layers in double junction cells. However, the practical cost limitation needs to be considered when aiming for high efficiency.