Synthesis of Wafer-Scale Graphene with Chemical Vapor Deposition for Electronic Device Applications

The first isolation of graphene opens the avenue for new platforms for physics, electronic engineering, and materials sciences. Among several kinds of synthesis approaches, chemical vapor deposition is most promising for the growth at wafer-scale, which is compatible with the Si-based electronic device integration protocols. In this review, the types, properties, and synthesis methods of graphene are first introduced. Many details of wafer-scale graphene synthesis by chemical vapor deposition strategies are given, including the wafer-scale single crystal metal and alloy preparation, roll to roll synthesis over Cu, roll to roll electrochemical transfer technique. Besides, the batch-to-batch synthesis are highlighted for direct graphene over dielectric substrates such as sapphire and Si/SiO2. The electronic transport and transparent conductance of the wafer-scale graphene are compared with high-quality single crystal. The progress and proof-of-the-concept are briefly recalled in graphene-based electronics such as transistors, sensors, integrated circuits, and spin transport valves. Eventually, the readers are provoked with the current challenges as well as the future opportunities.

Automated summary

The discovery of graphene has opened up new platforms for physics, electronic engineering, and materials sciences. Among various synthesis approaches, chemical vapor deposition shows promise for wafer-scale growth. This article provides a comprehensive overview of wafer-scale graphene synthesis and its potential applications in electronics.