High-Performance Solar Blind UV Photodetectors Based on Single-Crystal Si/β-Ga2O3 p-n Heterojunction

In this study, Si/beta-Ga2O3 solar-blind photodetectors (PDs) have been demonstrated via micro-transfer printing of a single crystalline Si pillar on beta-Ga2O3. Unlike other previous approaches for beta-Ga2O3 based heterojunction, this new single crystalline p-n Si/beta-Ga2O3 heterojunction has a particle-free heterointerface and does not show any sign of internal strain after the heterogeneous integration that is confirmed by Raman spectroscopy. As a result, PDs exhibit extremely high photoresponsivity (748 A W-1), quantum efficiency (3.67 x 10(5)%), and UV/visible rejection ratio (approximate to 10(5)) under UV light illumination. This result is believed to provide a viable route for the realization of high-performance solar-blind photodetection systems, which form some of the most indispensable and important components in high-performance next-generation security, biomedical, and environmental monitoring systems. Also, the unique heterogeneous integration method allows us to realize a variety of beta-Ga2O3 based heterostructures that can further enhance the optical performances of beta-Ga2O3 based PDs.

Automated summary

This study demonstrates Si/beta-Ga2O3 solar-blind photodetectors with high photoresponsivity and quantum efficiency. The unique heterogeneous integration method provides a viable route for achieving high-performance photodetection systems.