4.8 Article

Atomic-layer-confined multiple quantum wells enabled by monolithic bandgap engineering of transition metal dichalcogenides

Journal

SCIENCE ADVANCES
Volume 7, Issue 13, Pages -

Publisher

AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.abd7921

Keywords

-

Funding

  1. Samsung Research Funding Center of Samsung Electronics [SRFC-MA1502-12]
  2. National Research Foundation (NRF) of Korea [2017R1A5A1014862, 2020R1A2C2009389]
  3. KU-KIST School Project
  4. Korea Institute of Energy Technology Evaluation and Planning (KETEP) of the Republic of Korea
  5. Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea [20173010013340]
  6. NRF of Korea [2018R1A3A3000666, 2018R1A2B6008104]
  7. National Research Foundation of Korea [2020R1A2C2009389] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

Ask authors/readers for more resources

In this study, atomic-layer-confined multiple QWs were successfully fabricated through monolithic bandgap engineering of transition metal dichalcogenides and van der Waals stacking, leading to superlinear enhancement of photoluminescence and a large exciton binding energy. This work demonstrates the potential of monolithic integration of band-engineered hetero-structures for 2D quantum optoelectronics.
Quantum wells (QWs), enabling effective exciton confinement and strong light-matter interaction, form an essential building block for quantum optoelectronics. For two-dimensional (2D) semiconductors, however, constructing the QWs is still challenging because suitable materials and fabrication techniques are lacking for bandgap engineering and indirect bandgap transitions occur at the multilayer. Here, we demonstrate an unexplored approach to fabricate atomic-layer-confined multiple QWs (MQWs) via monolithic bandgap engineering of transition metal dichalcogenides and van der Waals stacking. The WOX/WSe2 hetero-bilayer formed by monolithic oxidation of the WSe2 bilayer exhibited the type I band alignment, facilitating as a building block for MQWs. A superlinear enhancement of photoluminescence with increasing the number of QWs was achieved. Furthermore, quantum-confined radiative recombination in MQWs was verified by a large exciton binding energy of 193 meV and a short exciton lifetime of 170 ps. This work paves the way toward monolithic integration of band-engineered hetero-structures for 2D quantum optoelectronics.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available