Electrical doping in halide perovskites

Halide perovskites exhibit outstanding semiconductor properties and are a key component of a variety of devices, including solar cells and light-emitting diodes. This Review discusses electrical doping strategies for halide perovskites and takes a critical look at the challenges that need to be overcome to control the electronic properties of these semiconducting materials. Electrical doping (that is, intentional engineering of carrier density) underlies most energy-related and optoelectronic semiconductor technologies. However, for the intensely studied halide perovskite family of semiconductors, reliable doping remains challenging, owing to, for example, compensation from and facile migration of intrinsic defects. In this Review, we first discuss the underlying fundamentals of semiconductor doping and then investigate different doping strategies in halide perovskites, including intrinsic defect, extrinsic defect and charge transfer doping, from an experimental as well as a theoretical perspective. We outline the advantages and pitfalls of different characterization techniques to assess doping and examine the impact of doping on optoelectronic properties. Finally, we highlight challenges that need to be overcome to gain control over the electronic properties of this important material class.

Automated summary

Halide perovskites have excellent semiconductor properties and are crucial for various devices, yet achieving reliable electrical doping remains challenging. This Review discusses semiconductor doping fundamentals, different doping strategies, characterization techniques, and emphasizes the challenges that need to be overcome for controlling the electronic properties of this important material class.