Journal
COATINGS
Volume 11, Issue 5, Pages -Publisher
MDPI
DOI: 10.3390/coatings11050585
Keywords
indium-free; ZATO; magnetron sputtering; microwave photoconductivity decay; thin film transistors
Categories
Funding
- National Natural Science Foundation of China [22090024, 62074059]
- Guangdong Major Project of Basic and Applied Basic Research [2019B030302007]
- Guangdong Basic and Applied Basic Research Foundation [2020B1515120020]
- Fundamental Research Funds for the Central Universities [2020ZYGXZR060, 2019MS012]
- Ji Hua Laboratory Scientific Research Project [X190221TF191]
- Sail Plan Special Innovative Entrepreneurial Teams in Guangdong Province [2015YT02C093]
- National College Students' Innovation and Entrepreneurship Training Program [202010561001, 202010561004, 202010561009]
- South China University of Technology 100 Step Ladder Climbing Plan Research Project [j2tw202102000]
- 2021 Guangdong University Student Science and Technology Innovation Special Fund (Climbing Plan Special Fund) [pdjh2021b0036]
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The study demonstrates that the TFT with ZATO semiconductor exhibits smooth and transparent characteristics under moderate oxygen concentration and low sputtering gas pressure, and shows optimal performance at a 623 K annealing temperature.
The indium-free amorphous oxide semiconductor thin film transistor (AOS-TFT) with aluminum (Al) electrodes shows broad application prospects in new-generation display technologies, such as ultra-high definition large-screen display, OLED display and 3D display. In this work, the thin film transistor (TFT) with a zinc-aluminum-tin-oxide (ZATO) semiconductor as the active layer and an Al electrodes as the source and drain (S/D) was investigated. The optical, electrical and semiconductive properties of the ZATO films were evaluated by atomic force microscopy (AFM), ultraviolet-visible spectrophotometry and microwave photoconductivity decay (mu-PCD), respectively. The result shows that the film is smooth and transparent and has low localized states and defects at a moderate oxygen concentration (similar to 5%) and a low sputtering gas pressure (similar to 3 mTorr). After the analysis of the transfer and output characteristics, it can be concluded that the device exhibits an optimal performance at the 623 K annealing temperature with an I-on/I-off ratio of 5.5 x 10(7), an SS value of 0.15 V/decade and a saturation mobility (mu(sat)) of 3.73 cm(2)center dot V-1 center dot s(-1). The ZATO TFT at the 623 K annealing has a -8.01 V negative shift under the -20 V NBS and a 2.66 V positive shift under the 20 V PBS.
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