Chemical Vapor Deposition Synthesis of Graphene over Sapphire Substrates

Graphene grown with less grain boundaries, larger grain sizes and transfer-free feature by chemical vapor deposition (CVD) is of significant importance to fulfill practical applications. Sapphire has readily emerged as an ideal substrate for graphene growth owing to its relatively low cost, good mechanical strength and physical/chemical stability under CVD conditions. In this minireview, recent advance in the CVD preparation of graphene over sapphire substrates is summarized. The graphene growth on epitaxial metal (111) film derived from c-plane sapphire and direct fabrication over sapphire are respectively discussed. Application sectors of graphene/sapphire hybrid materials are further reviewed. Finally, perspectives on the synthesis of graphene over sapphire are given.

Automated summary

Growing graphene on sapphire substrates using CVD allows for fewer grain boundaries, larger grain sizes, and transfer-free properties. Sapphire has emerged as an ideal substrate for graphene growth due to its low cost, good mechanical strength, and stability under CVD conditions. Applications of graphene/sapphire hybrid materials are diverse and the synthesis of graphene over sapphire shows promise.