Using Cu-Zn-Sn-O Precursor to Optimize CZTSSe Thin Films Fabricated by Se Doping With CZTS Thin Films

The copper-zinc-tin oxide (CZTO) precursor was synthesized to avoid sudden volume expansion from CZTO precursor to Cu2ZnSnS4 (CZTS) thin films and smooth CZTSSe thin-film surfaces without pinholes. The CZTO precursor was prepared by coprecipitation and ball milling to form nanoink of CZTO. Based on the CZTO precursor, the CZTS thin film was fabricated and then selenized to make pinhole-free and flat Cu2ZnSn(S,Se)(4)(CZTSSe) thin films. The results show that the CZTO precursor greatly contributed to elevating the homologous surface characteristics and crystallinity of CZTSSe thin films by controlling selenium temperature, selenium time, and selenium source temperature. Finally, the conversion efficiency of the CZTSSe thin-film solar cell fabricated from the CZTO precursor was 4.11%, with an open-circuit voltage (Voc) of 623 mV, a short circuit current density (Jsc) of 16.02 mA cm(-2), and a fill factor (FF) of 41.2%.

Automated summary

By synthesizing the copper-zinc-tin oxide (CZTO) precursor, fabricating CZTS thin film, and selenizing it, Cu2ZnSn(S,Se)(4) (CZTSSe) thin films with smooth surfaces and no pinholes were successfully obtained, with a conversion efficiency of 4.11%.