Journal
RESULTS IN PHYSICS
Volume 23, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.rinp.2021.104025
Keywords
MAPbI(3); TiO2; Charge transfer; Field-effect transistor
Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [NRF-2015R1A6A1A03031833, NRF-2019R1F1A1060042, NRF-2020R1A2C1007258]
- Hongik Faculty Research Support Fund
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The study reveals that trap density near the MAPbI(3)/TiO2 interface is significantly lower, while the TiO2 layer plays a crucial role in electronic passivation on the SiO2 surface. However, a rough surface suppresses efficient charge transport.
We developed a test platform structure to probe interfacial charge transport/transfer at the methyl-ammonium lead iodide (MAPbI(3))/TiO2 interface, demonstrating that trap density in the MAPbI(3) close to TiO2 is far lower than that without TiO2, evidenced from the gate voltage-dependent threshold voltage difference based on field effect transistor (FET) structure. We found that the TiO2 layer plays a crucial role in electronic passivation of the SiO2 surface, while a rough surface suppresses efficient charge transport at a large area between the source and drain electrodes.
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