Light-field-driven current control in solids with pJ-level laser pulses at 80 MHz repetition rate

Future PHz electronic devices may be able to perform operations on few-femtosecond time-scales. Such devices are based on the ability to control currents induced by intense few-cycle laser pulses. Investigations of this control scheme have been based on complex, amplified laser systems, typically delivering mJ or sub-mJ-level laser pulses, limiting the achievable clock rate to the kHz regime. Here, we demonstrate transient metallization and lightwave-driven current control with 300-pJ laser pulses at 80 MHz repetition rate in dielectric media (HfO2 and fused silica), and the wide-bandgap semiconductor GaN. We determine the field strength dependence of optically induced currents in these media. Supported by a theoretical model, we show scaling behaviors that will be instrumental in the construction of PHz electronic devices. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Automated summary

The research demonstrates transient metallization and lightwave-driven current control in dielectric media and semiconductors using low-energy laser pulses; it determines the field strength dependence of optically induced currents and shows scaling behaviors necessary for building PHz electronic devices.