Related references
Note: Only part of the references are listed.Variable Frequency Average Current Mode Control for ZVS Symmetrical Dual-Buck H-Bridge All-GaN Inverter
Qingyun Huang et al.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS (2020)
Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation
Andrea Natale Tallarico et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in p-GaN Gate HEMTs
Jin Wei et al.
IEEE ELECTRON DEVICE LETTERS (2019)
A 10-MHz GaNFET-Based-Isolated High Step-Down DC-DC Converter: Design and Magnetics Investigation
Prasanth Thummala et al.
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS (2019)
Hard-Switching 650-V GaN HEMTs in an 800-V DC-Grid System With No-Diode-Clamping Active-Balancing Three-Level Topology
Wei Qian et al.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS (2019)
PWM Plus Phase-Shift-Modulated Three-Port Three-Level Soft-Switching Converter Using GaN Switches for Photovoltaic Applications
Hadi Moradisizkoohi et al.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS (2019)
A Test Circuit for GaN HEMTs Dynamic RON Characterization in Power Electronics Applications
Pedro Javier Martinez et al.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS (2019)
Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling
Shu Yang et al.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS (2019)
Investigation on the Long-Term Reliability of High-Voltage p-GaN HEMT by Repetitively Transient Overcurrent
Yijun Shi et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit
M. Fernandez et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure
Dejana Cucak et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2017)
Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations
Hanxing Wang et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2017)
Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress
M. Tapajna et al.
IEEE ELECTRON DEVICE LETTERS (2016)
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate
Isabella Rossetto et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique
Xiao-Hua Ma et al.
APPLIED PHYSICS LETTERS (2013)