The Influence of Recrystallization on Zinc Oxide Microstructures Synthesized with Sol-Gel Method on Scintillating Properties

Zinc oxide (ZnO) is one of the wide-bandgap semiconductors, which may be useful in a plethora of electronic, optical, piezoelectric, and scintillating applications. The following article consists in a structural and luminescence analysis of ZnO microfilms grown on a sapphire substrate with a sol-gel method. The films were annealed at different temperatures. The structures were investigated with the XRD and Raman methods, by which the influence of the substrate on the structure of the film was determined. The luminescence of films was investigated with room-temperature fluorescence, radioluminescence, and thermoluminescence.

Automated summary

This article investigates the structural and luminescence properties of ZnO microfilms grown on a sapphire substrate using the sol-gel method. The influence of the substrate on the film structure was determined through XRD and Raman methods, while the luminescence of films was studied through various methods such as room-temperature fluorescence, radioluminescence, and thermoluminescence.