Journal
CRYSTALS
Volume 11, Issue 4, Pages -Publisher
MDPI
DOI: 10.3390/cryst11040411
Keywords
terahertz; ultrafast; CIGS; carrier dynamics
Funding
- Gwangju Institute of Science and Technology (GIST) Research Institute (GRI) - GIST
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science and ICT [NRF-2019R1F1A1063156]
- Technology Development Program to Solve Climate Changes of the National Research Foundation (NRF) - Ministry of Science, ICT and Future Planning [2016M1A2A2936754]
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Ar-ion implantation increases the THz emission and carrier dynamics of CIGS films.
We investigated THz emission from Ar-ion-implanted Cu(In,Ga)Se-2 (CIGS) films. THz radiation from the CIGS films increases as the density of implanted Ar ions increases. This is because Ar ions contribute to an increase in the surface surge current density. The effect of Ar-ion implantation on the carrier dynamics of CIGS films was also investigated using optical pump THz probe spectroscopy. The fitted results imply that implanted Ar ions increase the charge transition of intra-and carrier-carrier scattering lifetimes and decrease the bandgap transition lifetime.
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