Journal
APPLIED SCIENCES-BASEL
Volume 11, Issue 10, Pages -Publisher
MDPI
DOI: 10.3390/app11104393
Keywords
Aluminum oxide; dielectric; thin-film transistor; solution-processed; oxide semiconductor
Categories
Funding
- National Natural Science Foundation of China [62022034, 51673068, 62074059]
- Guangdong Natural Science Foundation [2017A030306007]
- Guangdong Project of R&D Plan in Key Areas [2020B010180001, 2019B010934001]
- Guangdong Major Project of Basic and Applied Basic Research [2019B030302007]
- Key Project of Guangzhou Science and Technology Plan [201904020034]
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The study systematically investigated solution-processed AlOx dielectrics, revealing that the capacitance of AlOx is critically dependent on frequency when annealed at low temperatures and subjected to water treatment. These findings highlight the impact of mobile ions on the frequency-dependent capacitance of solution-processed AlOx dielectrics.
Over the past decade, there have been many reports on solution-processed oxide thin-film transistors (TFTs) with high mobility (even >100 cm(2) V(-1)s(-1)). However, the capacitance uncertainty of the solution-processed oxide gate dielectrics leads to serious overestimation of the mobility. Here, solution-processed AlOx dielectrics are investigated systematically, and the effect of mobile ions on the frequency-dependent capacitance of the solution-processed AlOx dielectrics is also studied. It was found that the capacitance of the AlOx depends on the frequency seriously when the annealing temperature is lower than 300 degrees C, and the water treatment causes more seriously frequency-dependent capacitance. The strong frequency-dependent capacitance of the AlOx annealed at 250 or 300 degrees C is attributed to relaxation polarization of the weakly bound ions in the incompletely decomposed AlOx films. The water treatment introduces a large number of protons (H+) that would migrate to the ITO/AlOx interface under a certain electric field and form an electric double layer (EDL) that has ultrahigh capacitance at low frequency.
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