Charge-Transfer Induced by the Oxygen Vacancy Defects in the Ag/MoO3 Composite System

In this paper, an Ag/MoO3 composite system was cosputtered by Ar plasma bombardment on a polystyrene (PS) colloidal microsphere array. The MoO3 formed by this method contained abundant oxygen vacancy defects, which provided a channel for charge transfer in the system and compensated for the wide band gap of MoO3. Various characterization methods strongly demonstrated the existence of oxygen vacancy defects and detected the properties of oxygen vacancies. 4-Aminothiophenol (p-aminothiophenol, PATP) was used as a candidate surface-enhanced Raman scattering (SERS) probe molecule to evaluate the contribution of the oxygen vacancy defects in the Ag/MoO3 composite system. Interestingly, oxygen vacancy defects are a kind of charge channel, and their powerful effect is fully reflected in their SERS spectra. Increasing the number of charge channels and increasing the utilization rate of the channels caused the frequency of SERS characteristic peaks to shift. This interesting phenomenon opens up a new horizon for the study of SERS in oxygen-containing semiconductors and provides a powerful reference for the study of PATP.

Automated summary

In this study, an Ag/MoO3 composite system was cosputtered onto a polystyrene colloidal microsphere array using Ar plasma bombardment, resulting in MoO3 with abundant oxygen vacancy defects. By using 4-aminothiophenol as a probe molecule, the contribution of oxygen vacancy defects to the system was evaluated, showing that they provide a channel for charge transfer. The presence of oxygen vacancy defects influences the SERS spectra, demonstrating their powerful effect on the system.