Journal
NANOMATERIALS
Volume 11, Issue 3, Pages -Publisher
MDPI
DOI: 10.3390/nano11030819
Keywords
thermoelectric; bismuth selenide; nanowire
Categories
Funding
- National Science Council of Taiwan [NSC 100-2112-M-001-019-MY3]
- Research Center for Electronics and Telecommunications (P2ET), Indonesian Institute of Sciences (LIPI)
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This study reports on the thermoelectric properties of topological insulator bismuth selenide nanowires, achieved using a specially designed platform for simultaneous measurements on a single wire. Experimental results on the properties of conductivity, Seebeck coefficient, and thermal conductivity were found to be in good agreement with theoretical studies.
The discovery of topological insulators (TIs) has motivated detailed studies on their physical properties, especially on their novel surface states via strong spin-orbit interactions. However, surface-state-related thermoelectric properties are rarely reported, likely because of the involvement of their bulk-dominating contribution. In this work, we report thermoelectric studies on a TI bismuth selenide (Bi2Se3) nanowire (NW) that exhibit a larger surface/volume ratio. Uniform single-crystalline TI Bi2Se3 NWs were successfully synthesized using a stress-induced growth method. To achieve the study of the thermoelectric properties of a nanowire (NW), including electrical conductivity (sigma), Seebeck coefficient (S), and thermal conductivity (kappa), a special platform for simultaneously performing all measurements on a single wire was designed. The properties of sigma, S, and kappa of a 200 nm NW that was well precharacterized using transmission electron microscope (TEM) measurements were determined using the four-probe method, the two-probe EMF across backward difference T measurement, and the 3 omega technique, respectively. The integrated TE properties represented by the figure of merit ZT (S-2 sigma T/kappa) were found to be in good agreement with a theoretical study of Bi2Se3 NW.
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