Journal
NANOMATERIALS
Volume 11, Issue 3, Pages -Publisher
MDPI
DOI: 10.3390/nano11030755
Keywords
chemical vapor deposition (CVD) graphene; photodetector; Bi2Te3 nanowires; infrared photodetector; graphene photodetector
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Funding
- Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) [2013M3A6B1078873]
- Creative Materials Discovery Program of the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning (MOSIP), Korea [2015M3D1A1068062]
- Nano Materials Technology Development Program of the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning (MOSIP), Korea [2016M3A7B4909942]
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A graphene photodetector decorated with Bi2Te3 nanowires demonstrated high gain and wide bandwidth window. The photoconductive gain was significantly improved compared to a graphene/Bi2Te3 nanoplate junction, and the position of photocurrent generation was investigated. By utilizing low bandgap Bi2Te3 nanowires and a graphene junction, the photoresponsivity was increased effectively.
A graphene photodetector decorated with Bi2Te3 nanowires (NWs) with a high gain of up to 3 x 10(4) and wide bandwidth window (400-2200 nm) has been demonstrated. The photoconductive gain was improved by two orders of magnitude compared to the gain of a photodetector using a graphene/Bi2Te3 nanoplate junction. Additionally, the position of photocurrent generation was investigated at the graphene/Bi2Te3 NWs junction. Eventually, with low bandgap Bi2Te3 NWs and a graphene junction, the photoresponsivity improved by 200% at 2200 nm (similar to 0.09 mA/W).
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