UV Nanoimprint Lithography: Geometrical Impact on Filling Properties of Nanoscale Patterns

Ultraviolet (UV) Nanoimprint Lithography (NIL) is a replication method that is well known for its capability to address a wide range of pattern sizes and shapes. It has proven to be an efficient production method for patterning resist layers with features ranging from a few hundred micrometers and down to the nanometer range. Best results can be achieved if the fundamental behavior of the imprint resist and the pattern filling are considered by the equipment and process parameters. In particular, the material properties and pattern size and shape play a crucial role. For capillary force-driven filling behavior it is important to understand the influencing parameters and respective failure modes in order to optimize the processes for reliable full wafer manufacturing. In this work, the nanoimprint results obtained for different pattern geometries are compared with respect to pattern quality and residual layer thickness: The comprehensive overview of the relevant process parameters is helpful for setting up NIL processes for different nanostructures with minimum layer thickness.

Automated summary

The UV Nanoimprint Lithography is efficient in producing resist layers with features ranging from micrometers to nanometers. Understanding material properties, pattern size, and shape is crucial for optimizing processes for reliable manufacturing. Comparing results for different pattern geometries can provide a helpful overview of relevant process parameters.