4.7 Article

Blue Electroluminescence in SRO-HFCVD Films

Journal

NANOMATERIALS
Volume 11, Issue 4, Pages -

Publisher

MDPI
DOI: 10.3390/nano11040943

Keywords

electroluminescence; HFCVD; conduction mechanisms

Funding

  1. Tecnologico Nacional de Mexico/Instituto Tecnologico de Apizaco

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This study investigated electroluminescence in Metal-Insulator-Semiconductors (MIS) and Metal-Insulator-Metal (MIM) structures, analyzing the effects of SRO film thickness, refractive indices, and conduction mechanisms on carrier transport and emission properties.
In this work, electroluminescence in Metal-Insulator-Semiconductors (MIS) and Metal-Insulator-Metal (MIM)-type structures was studied. These structures were fabricated with single- and double-layer silicon-rich-oxide (SRO) films by means of Hot Filament Chemical Vapor Deposition (HFCVD), gold and indium tin oxide (ITO) were used on silicon and quartz substrates as a back and front contact, respectively. The thickness, refractive indices, and excess silicon of the SRO films were analyzed. The behavior of the MIS and MIM-type structures and the effects of the pristine current-voltage (I-V) curves with high and low conduction states are presented. The structures exhibit different conduction mechanisms as the Ohmic, Poole-Frenkel, Fowler-Nordheim, and Hopping that contribute to carrier transport in the SRO films. These conduction mechanisms are related to the electroluminescence spectra obtained from the MIS and MIM-like structures with SRO films. The electroluminescence present in these structures has shown bright dots in the low current of 36 uA with a voltage of -20 V to -50 V. However, when applied voltages greater than -67 V with 270 uA, a full area with uniform blue light emission is shown.

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