Ti Interlayer Mediated Uniform NiGe Formation under Low-Temperature Microwave Annealing

The reactions between nickel and germanium are investigated by the incorporation of a titanium interlayer on germanium (100) substrate. Under microwave annealing (MWA), the nickel germanide layers are formed from 150 degrees C to 350 degrees C for 360 s in ambient nitrogen atmosphere. It is found that the best quality nickel germanide is achieved by microwave annealing at 350 degrees C. The titanium interlayer becomes a titanium cap layer after annealing. Increasing the diffusion of Ni by MWA and decreasing the diffusion of Ni by Ti are ascribed to induce the uniform formation of nickel germanide layer at low MWA temperature.

Automated summary

The study investigates the reactions between nickel and germanium by incorporating a titanium interlayer, with the best quality nickel germanide achieved through microwave annealing at 350 degrees C. The titanium interlayer acts as a cap layer after annealing, facilitating the uniform formation of nickel germanide layer at low microwave annealing temperatures.