Journal
ADVANCED MATERIALS INTERFACES
Volume 8, Issue 10, Pages -Publisher
WILEY
DOI: 10.1002/admi.202100058
Keywords
antimony triselenide (Sb; Se-2; (3)); broad spectrum; photodetectors; self‐ powered photodetectors; VO; (2)
Funding
- Shenzhen Science and Technology Project [JCYJ20180507182246321, JCYJ20200109105825504]
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The study successfully fabricated a Sb2Se3/VO2 heterojunction photodetector with self-powered broadband photoresponse and ultrafast response speed, showing optimal performance under 520 nm light incidence.
Sb2Se3/VO2 heterojunction is successfully fabricated on a sapphire substrate using pulsed laser deposition (PLD) and magnetron sputtering. The device shows prominent self-powered broadband photoresponse with ultrafast response speed at both rise and decay processes. The highest responsivity of the device is acquired under 520 nm wavelength light incidence. The optimized responsivity reaches 0.244 A W-1 and the response times are 200 and 360 mu s at rise and decay, respectively. Sb2Se3/VO2 heterojunction is promising for self-powered broadband photodetectors.
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