Journal
MICROMACHINES
Volume 12, Issue 5, Pages -Publisher
MDPI
DOI: 10.3390/mi12050509
Keywords
p-GaN gate HEMT; normally off; low-resistance SiC substrate; temperature
Categories
Funding
- Ministry of Science and Technology (MOST), Taiwan, R.O.C. [MOST 109-2218-E-182-001]
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This study investigates the electrical characteristics of normally off p-GaN gate AlGaN/GaN HEMTs on a low-resistivity SiC substrate compared with traditional Si substrate, demonstrating improved performance in terms of electrical characteristics and crystal quality, especially in temperature performance.
Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity. This article reports the electrical characteristics of normally off p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) on a low-resistivity SiC substrate compared with the traditional Si substrate. The p-GaN HEMTs on the SiC substrate possess several advantages, including electrical characteristics and good qualities of epitaxial crystals, especially on temperature performance. Additionally, the price of the low-resistivity SiC substrate is three times lower than the ordinary SiC substrate.
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