Direct Contact Electroplating Sequence Without Initial Seed Layer for Bifacial TOPCon Solar Cell Metallization

The metallization of bifacial tunneling oxide and passivating contacts (TOPCon) solar cells without initial metal seed layer by electroplating of Ni/Cu/Ag is demonstrated. The presented approach allows a lead-free metallization with narrow contact geometries and low contact resistivity. A metal plate provides electrical contact to the silicon via micrometer size laser contact openings and allows electroplating of bifacial TOPCon solar cells using industrial type inline plating tools without the need of a previously applied seed layer. Challenges such as direct contacting of silicon and dissolution of contacts are identified, and potential solutions are discussed. An optimized process sequence is developed and with this approach a solar cell efficiency of 22.5% is demonstrated on industrial bifacial TOPCon solar cells reaching the same level as the screen-printed reference solar cells.

Automated summary

The study demonstrates a lead-free metallization approach for bifacial tunneling oxide and passivating contacts (TOPCon) solar cells without the need for an initial metal seed layer, achieved by electroplating Ni/Cu/Ag. The method allows for narrow contact geometries and low contact resistivity, addressing challenges such as direct contacting of silicon and dissolution of contacts. An optimized process sequence resulted in a solar cell efficiency of 22.5% on industrial bifacial TOPCon solar cells, matching the performance of screen-printed reference solar cells.