Journal
SILICON
Volume 14, Issue 7, Pages 3543-3550Publisher
SPRINGER
DOI: 10.1007/s12633-021-01128-x
Keywords
FinFET; Gate-all-around (GAA); Nanosheet (NS); RC delay; Sub-7-nm node; Work function (WF)
Ask authors/readers for more resources
This article investigates the analog/RF performance of n-channel vertically stacked gate all around (GAA) silicon nanosheet field effect transistors (Si-NSFETs) using 3-D TCAD simulations. The study suggests that reducing gate length and increasing nanosheet width can improve RF performance but degrade the intrinsic gain of analog performance.
In this article, the analog/RF performance of n-channel vertically stacked gate all around (GAA) silicon nanosheet field effect transistors (Si-NSFETs) are investigated using 3-D TCAD simulations. The influence of gate length (L-G) scaling, nanosheet width (W-NS) and spacing between the nanosheets on the analog/RF performance of vertically stacked GAA Si-NSFET with two nanosheets are explored. The 3-D TCAD simulations indicates that reducing L-G from 20 nm to 12 nm results in the improvement of RF performance in terms of increased g(m) (transconductance), drive current, f(T) (cut off frequency), f(max) (maximum oscillation frequency) and degradation of analog performance in terms of reduced intrinsic gain. 3-D TCAD simulations also shows that increasing the W-NS from 10 nm to 18 nm leads to the enhancement of g(m) and drive current, does not affect the f(T) and degrades the intrinsic gain due to the increase of drain conductance and gate capacitance. It is also observed that the spacing between the nanosheets does not have any significant impact on analog/RF performance of vertically stacked GAA Si-NSFETs. Consequently, the vertically stacked GAA Si-NSFETs with lower L-G and higher W-NS will be more suitable to realize both flash memory and dynamic random access memory (DRAM) for improved performance owing to their better RF performance.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available