Journal
SILICON
Volume 14, Issue 6, Pages 2863-2869Publisher
SPRINGER
DOI: 10.1007/s12633-021-01074-8
Keywords
RRAM; Forming voltage; Annealing; Temperature; Switching uniformity; Device reliability
Funding
- Government of India
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The study found that devices formed with annealing and high ambient temperature had lower operating voltage, improved uniformity, and reliability compared to devices formed without annealing at low temperature.
This work focused on the effects of electroforming ambient temperature and annealing process on the metal oxide multilayer switching resistive random access memory (RRAM) device. We developed Pt/HfO2/TiO2/HfO2/Pt RRAM cells with annealing and without annealing process. Annealed devices are electroformed at a high ambient temperature 80 degrees C (A-80). Non-annealed devices are electroformed at low atmosphere temperature 25 degrees C (NA-25). We investigate the outcomes of NA-25 and A-80 devices. Results confirmed that annealed and high ambient temperature formed devices (A-80) contribute to the low operating voltage, improved uniformity, and reliability compared to NA-25 device.
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