Journal
SCIENTIFIC REPORTS
Volume 11, Issue 1, Pages -Publisher
NATURE RESEARCH
DOI: 10.1038/s41598-021-89315-z
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Funding
- National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [NRF-2017R1D1A1B03032375, 2016R1A6A1A03012877, NRF-2018M3C1B9088457]
- Ministry of Science and ICT [NRF-2018M3C1B9088457]
- Samsung Display Co., Ltd.
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TiOx-based resistive switching devices with high transparency and excellent switching characteristics, including distinguishable multi-level switching, show promise for high-performance non-volatile memory applications.
TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.
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