Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

Power devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on bulk and single-crystal semiconductors require high temperature (>1000 degrees C) fabrication processing and a thick (typically a few tens to 100 mu m) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on thin-films of amorphous oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance R-on,R-sp (<1x10(-4) Omega cm(2)) and high breakdown voltage V-BD (similar to 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

Automated summary

The report introduces next-generation PDs based on thin films of amorphous oxide semiconductors with performance surpassing the silicon limit. This breakthrough was achieved by creating an ideal Schottky interface at the interface, resulting in low specific on-resistance and high breakdown voltage. The technology allows successful fabrication of prototypes on flexible polyimide films, which are not compatible with the fabrication process of bulk single-crystal devices.