Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice

In this work, a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with 100% cut-off wavelength of similar to 5.0 mu m at 200 K grown by molecular beam epitaxy was demonstrated. The InAsSb-based SAM-APD device was designed to have electron dominated avalanche mechanism via the band structure engineered multi-quantum well structure based on AlAsSb/GaSb H-structure superlattice and InAsSb material in the multiplication region. The device exhibits a maximum multiplication gain of 29 at 200 K under -14.7 bias voltage. The maximum multiplication gain value for the MWIR SAM-APD increases from 29 at 200 K to 121 at 150 K. The electron and hole impact ionization coefficients were derived and the large difference between their value was observed. The carrier ionization ratio for the MWIR SAM-APD device was calculated to be similar to 0.097 at 200 K.

Automated summary

In this work, a mid-wavelength infrared Separate Absorption and Multiplication Avalanche Photodiode (SAM-APD) with excellent performance at 200K was demonstrated, with a maximum gain of 29 which can increase to 121 as the temperature decreases. Impact ionization coefficients for electrons and holes were derived, showing a significant difference in their values. The carrier ionization ratio for the MWIR SAM-APD device was calculated to be approximately 0.097 at 200K.