4.7 Article

Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor

Journal

SCIENTIFIC REPORTS
Volume 11, Issue 1, Pages -

Publisher

NATURE PORTFOLIO
DOI: 10.1038/s41598-021-86575-7

Keywords

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Funding

  1. National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology, Republic of Korea [NRF-2020R1A2C1009630]

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This study demonstrates gate-controlled amplifiable ultraviolet phototransistors using AlGaN/GaN HEMTs with very thin AlGaN barriers. The thickness of the AlGaN barrier affects the dark current and photocurrent differently, and the gate bias has different effects on the phototransistor depending on the AlGaN barrier thickness.
Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN HEMTs, the dark current between the source and drain increases with increasing thickness of the AlGaN barrier from 10 to 30 nm owing to the increase in piezoelectric polarization-induced two-dimensional electron gas (2-DEG). However, the photocurrent of the AlGaN/GaN HEMT decreases with increasing thickness of the AlGaN barrier under ultraviolet exposure conditions. It can be observed that a thicker AlGaN barrier exhibits a much higher 2-DEG than the photogenerated carriers at the interface between AlGaN and GaN. In addition, regardless of the AlGaN barrier thickness, the source-drain dark current increases as the gate bias increases from - 1.0 to+1.0 V. However, the photocurrent of the phototransistor with the 30 nm thick AlGaN barrier was not affected by the gate bias, whereas that of the phototransistor with 10 nm thick AlGaN barrier was amplified from reduction of the gate bias. From these results, we suggest that by controlling the gate bias, a thin AlGaN barrier can amplify/attenuate the photocurrent of the AlGaN/GaN HEMT-based phototransistor.

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