Journal
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY
Volume 11, Issue 5, Pages 748-754Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCPMT.2021.3072994
Keywords
3-D print; GaN; microjet impingent cooling; transistor
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Funding
- Engineering and Physical Sciences Research (EPSRC) Council, U. K. (Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs) [EP/P00945X/1]
- EPSRC [EP/P00945X/1] Funding Source: UKRI
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In this study, the use of 3-D printed polymeric microjet liquid impingement cooling has been shown to reduce the thermal resistance at the package level by approximately 60% compared to conventional packaging with GaN RF HEMTs. This method helps prevent the package and heatsink from becoming thermal bottlenecks, maximizing the benefits of ultrahigh-power-density electronic devices.
Future GaN-based radio frequency (RF) high-electron-mobility-transistors (HEMTs) can enable increased areal power dissipation by, for example, integrating GaN device layers with high thermal conductivity diamond substrates. To maximize the benefit of the ultrahigh-power-density electronic devices, improved package-level cooling methods are needed to prevent the package and heatsink becoming a thermal bottleneck. We demonstrate that 3-D printed polymeric microjet liquid impingement cooling can reduce the thermal resistance at the package level by similar to 60% with respect to GaN RF HEMTs mounted on conventional packaging.
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