Related references
Note: Only part of the references are listed.Defect gradient control in amorphous InGaZnO for high-performance thin-film transistors
Dapeng Wang et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)
Unique degradation under AC stress in high-mobility amorphous In-W-Zn-O thin-film transistors
Takanori Takahashi et al.
APPLIED PHYSICS EXPRESS (2020)
Study of Positive-Gate-Bias-Induced Hump Phenomenon in Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors
Xuewen Shi et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Influence of substrate and sintering temperature on the thickness and number of layers of 3YSZ multilayer sol-gel coatings
Juan P. Carrasco-Amador et al.
CERAMICS INTERNATIONAL (2020)
Solution-processed flexible metal-oxide thin-film transistors operating beyond 20 MHz
Xiaozhu Wei et al.
FLEXIBLE AND PRINTED ELECTRONICS (2020)
High-performance Zinc-Tin-Oxide thin film transistors based on environment friendly solution process
Qian Zhang et al.
CURRENT APPLIED PHYSICS (2019)
Rapid and facile low-temperature solution production of ZrO2 films as high-k dielectrics for flexible low-voltage thin-film transistors
Guodong Xia et al.
CERAMICS INTERNATIONAL (2019)
Electrical characterization of graphene source/drain electrodes in amorphous indium-gallium-zinc-oxide thin-film transistors subjected to plasma treatment in contact regions
Jaewook Jeong et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
Revisit of amorphous semiconductor InGaZnO4 : A new electron transport material for perovskite solar cells
Zhenggang Rao et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2019)
Low-temperature solution-processed flexible metal oxide thin-film transistors via laser annealing
Cihai Chen et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2019)
Wearable 1V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature
Byoung-Soo Yu et al.
SCIENTIFIC REPORTS (2019)
A facile low-cost preparation of high-k ZrO2 dielectric films for superior thin-film transistors
Sumei Wang et al.
CERAMICS INTERNATIONAL (2019)
Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition
Min Hoe Cho et al.
JOURNAL OF INFORMATION DISPLAY (2019)
Low-Temperature Fabrication of Robust, Transparent, and Flexible Thin-Film Transistors with a Nanolaminated Insulator
Jeong Hyun Kwon et al.
ACS APPLIED MATERIALS & INTERFACES (2018)
Selective UV-O3 treatment for indium zinc oxide thin film transistors with solution-based multiple active layer
Yu-Jung Kim et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2018)
High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal-Organic Decomposition Method
Yingtao Xie et al.
JOURNAL OF NANOMATERIALS (2018)
Bias and illumination instability analysis of solution-processed a-InGaZnO thin-film transistors with different component ratios
Ji-Hwan Kim et al.
THIN SOLID FILMS (2018)
Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method
Xiang Yang et al.
RSC ADVANCES (2018)
Facile fabrication of wire-type indium gallium zinc oxide thin-film transistors applicable to ultrasensitive flexible sensors
Yeong-gyu Kim et al.
SCIENTIFIC REPORTS (2018)
High-Mobility IGZO TFTs by Infrared Radiation Activated Low-Temperature Solution Process
Guodong Xia et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Flexible CMOS integrated circuits based on carbon nanotubes with sub-10 ns stage delays
Jianshi Tang et al.
NATURE ELECTRONICS (2018)
Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors
Da Wan et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Effect of Active Layer Thickness on Device Performance of Tungsten-Doped InZnO Thin-Film Transistor
Hyun-Woo Park et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
Effective Improvements in Microstructure and Electrical Properties of the IGZO Films by Sputtering Angles
Tse-Chang Li et al.
INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY (2016)
Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors
Ao Liu et al.
JOURNAL OF MATERIALS CHEMISTRY C (2016)
Improvement of electrical characteristics of solution-processed InZnO thin-film transistor by vacuum annealing and nitrogen pressure treatment at 200 °C
Woong Hee Jeong et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2015)
Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method
Chao-Ming Hsu et al.
MATERIALS (2015)
Enhanced Electrical Characteristics and Stability via Simultaneous Ultraviolet and Thermal Treatment of Passivated Amorphous In-Ga-Zn-O Thin-Film Transistors
Young Jun Tak et al.
ACS APPLIED MATERIALS & INTERFACES (2014)
Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250°C
Md Delwar Hossain Chowdhury et al.
APPLIED PHYSICS LETTERS (2014)
Solution processed amorphous InGaZnO semiconductor thin films and transistors
Chien-Yie Tsay et al.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS (2014)
Low-Temperature, High-Performance Solution-Processed Thin-Film Transistors with Peroxo-Zirconium Oxide Dielectric
Jee Ho Park et al.
ACS APPLIED MATERIALS & INTERFACES (2013)
Fabrication of negative thermal expansion ZrMo2O8 film by sol-gel method
Qinqin Liu et al.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS (2012)
Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors
Hyeon-Kyun Noh et al.
PHYSICAL REVIEW B (2011)
Modelling of an infrared halogen lamp in a rapid thermal system
P. O. Logerais et al.
INTERNATIONAL JOURNAL OF THERMAL SCIENCES (2010)
InGaZnO semiconductor thin film fabricated using pulsed laser deposition
Jiangbo Chen et al.
OPTICS EXPRESS (2010)
Present status of amorphous In-Ga-Zn-O thin-film transistors
Toshio Kamiya et al.
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS (2010)
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K Nomura et al.
NATURE (2004)