Structural, electrical and optical properties of CuIn0.8Ga0.2S2 thin film deposited by close spaced vapor transport technique

High quality CuIn0.8Ga0.2S2(CIGS) absorber material for thin film solar cells applications was deposited on soda lime glass substrate through the close spaced vapor transport (CSVT) technique. Deposition conditions were chosen to obtain high quality films. CIGS thin layer was investigated by scanning electron microscope (SEM), X-Ray diffraction (XRD), Vis-NIR spectroscopy and Hall Effect measurements. The temperature dependent Hall Effect measurements in the range 80?400 K have been performed. Activation energies were estimated from the Arrhenius plot of the conductivity versus 1/T and were42 meV and 15 meV at high and low temperature regimes, which coincide with the activation energies of the Cu vacancy (VCu) and the Ga vacancy (VGa), respectively. The mobility?s temperature dependence of the charge was discussed and the predominant scattering mechanisms were assigned to the ionized impurity and non-polar optical phonon scattering at low and high temperature regimes, respectively.

Automated summary

High quality CIGS absorber material for thin film solar cells was deposited on soda lime glass substrate using the CSVT technique. The CIGS thin layer was analyzed using SEM, XRD, Vis-NIR spectroscopy, and Hall Effect measurements, revealing activation energies and charge mobility's temperature dependence. The predominant scattering mechanisms were identified as ionized impurity and non-polar optical phonon scattering at different temperature regimes.