Electrons irradiation of III-V//Si solar cells for NIRT conditions

- In this study, we evaluate the potential of III-V//Si solar cell technology for space applications. We present experimental results on wafer bonded 2-terminal III-V//Si solar cells degradation under 1 MeV electrons irradiation. Beginning-Of-Life (BOL) and End Of Life (EOL) electrical performances were measured under Normal Irradiance (100% AM0) and Room Temperature (300K) conditions (NIRT). No degradation of the wafer bonding interface was detected. The impact of electron irradiation on effective diffusion length in the silicon bottom cell was calculated using the Internal Quantum Efficiency model for different solar cells architectures. Improvement paths towards higher EOL III-V//Si solar cells are discussed.

Automated summary

This study evaluates the potential of III-V//Si solar cell technology for space applications, presenting experimental results on degradation of wafer bonded 2-terminal III-V//Si solar cells under 1 MeV electrons irradiation. The impact of electron irradiation on effective diffusion length in the silicon bottom cell was calculated using the Internal Quantum Efficiency model. Paths towards higher EOL III-V//Si solar cells are discussed for improvement.