Journal
SOLAR ENERGY
Volume 220, Issue -, Pages 163-174Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.solener.2021.03.034
Keywords
Detailed balance limit; Bifacial double-junction tandem solar cells; Perovskite top solar cell; Silicon bottom solar cell
Categories
Funding
- NEDO (the New Energy and Industrial Technology Development Organization) in Japan
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The study calculates the detailed balance limit for bifacial two-terminal tandem solar cells, revealing optimized bandgaps for matching photogenerated current densities of two subcells to maximize output power. Additionally, it is found that the current mismatching in monofacial solar cells can be solved by suitable (Front Irr + Back Irr)/Front Irr ratios.
Detailed balance limit is calculated for bifacial two-terminal tandem (double-junction) solar cells. The solar cells are considered as blackbody with temperature of 298.15 K and front illumination of air mass (AM)1.5G spectrum as well as back illumination of effective albedo (R-A) x AM1.5G spectrum. Under spectral independent R-A, ((Front Irr + Back Irr)/Front Irr) is defined as a ratio of (front irradiance + back irradiance) to front irradiance. Optimized bandgaps for bottom subcell (Eg-bottom) and top subcell (Eg-top) of the bifacial tandem solar cells are revealed to match photogenerated current densities of two subcells, thereby yielding their maximum output power under varying ((Front Irr + Back Irr)/Front Irr). Moreover, it is disclosed that the current mismatching in monofacial perovskite/silicon tandem solar cell can be solved by the structure of the bifacial perovskite/silicon tandem solar cell with suitable (Front Irr + Back Irr)/Front Irr. Therefore, bifacial perovskite/silicon tandem solar cell generates more output power up to 66% than its monofacial counterpart despite low (Front Irr + Back Irr)/Front Irr of 1.244 (or R-A of 0.244). The optimized Eg-bottom is additionally disclosed in bifacial tandem solar cell with Eg-top (perovskite top subcell) of 1.55 eV, as well as optimized Eg-top is revealed with Eg-bottom (silicon bottom subcell) of 1.12 eV under different (Front Irr + Back Irr)/Front Irr values.
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