Journal
SENSORS
Volume 21, Issue 10, Pages -Publisher
MDPI
DOI: 10.3390/s21103342
Keywords
gas sensor; metal oxide; nanowires
Funding
- Spanish Ministerio de Economia y Competitividad [TEC2013-48147-C6, TEC2016-79898-C6]
- Ministerio de Economia e Innovacion [PID2019-107697RB-C41]
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Active research in nanostructured materials is aimed at improving electronic device characteristics, particularly in the field of gas sensors. Mixing different metal oxides on the same nanowire can broaden the response of gas sensors, resulting in improved performance without compromising miniaturization. This study focuses on the synthesis, characterization, and gas sensing performance of (GaxIn1-x)(2)O-3 nanowires, demonstrating promising results for the development of portable devices.
Active research in nanostructured materials aims to explore new paths for improving electronic device characteristics. In the field of gas sensors, those based on metal oxide single nanowires exhibit excellent sensitivity and can operate at extremely low power consumption, making them a highly promising candidate for a novel generation of portable devices. The mix of two different metal oxides on the same nanowire can further broaden the response of this kind of gas sensor, thus widening the range of detectable gases, without compromising the properties related to the active region miniaturization. In this paper, a first study on the synthesis, characterization and gas sensing performance of (GaxIn1-x)(2)O-3 nanowires (NWs) is reported. Carbothermal metal-assisted chemical vapor deposition was carried out with different mixtures of Ga2O3, In2O3 and graphite powders. Structural characterization of the NWs revealed that they have a crystalline structure close to that of In2O3 nanowires, with a small amount of Ga incorporation, which highly depends on the mass ratio between the two precursors. Dedicated gas nanosensors based on single NWs were fabricated and tested for both ethanol and nitrogen dioxide, demonstrating an improved performance compared to similar devices based on pure In2O3 or Ga2O3 NWs.
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